Cree debuts GaN-based MMICs and foundry service
Press Releases - As issued by company
June 16, 2008... The pioneering wide-bandgap semiconductor company launches the world's first commercially available GaN monolithic microwave integrated circuit (MMIC) amplifiers
Durham, North Carolina USA -- Cree, Inc. announces the introduction of the world's first commercially available GaN monolithic microwave integrated circuit (MMIC) amplifiers.
These two "catalog" MMICs integrate Cree's proven GaN RF transistor technology with a variety of other circuit elements to form fully integrated amplifier circuits. This allows for a dramatic reduction in size and increase in performance over hybrid amplifiers. Many RF integrated circuits can now be identically replicated on a single silicon carbide (SiC) substrate in a production process similar to that used for commercial microprocessors.
The new broadband power amplifier MMICs, the CMPA0060005 and CMPA2560025, are now available for sample release in packaged and die formats.
The CMPA0060005 is a wideband 5 watt distributed amplifier operating from DC to 6 GHz. The CMPA2560025 is a higher power, 25 watt reactively matched amplifier operating from 2.5 to 6 GHz. Both MMICs are suitable for a variety of applications where high power over broad bandwidths is required. As an example, a pair of CMPA2560025s, driven by a CMPA0060005 can provide over 40 dB gain with an output power up to 50 watts in the 2.5 to 6 GHz band.
Cree also announces the expansion of its standard full-wafer (SFW) MMIC Foundry service to include shared multi-project (SMP) "pizza mask" foundry runs on a quarterly basis. This SMP service is available for both SiC MESFET and GaN HEMT MMIC processes.
"The introduction of the industry's first off-the-shelf "catalog" GaN MMICs continues to set Cree apart as the industry's leader in wide bandgap MMIC technology," said Jim Milligan, Cree director of RF and microwave products.
"These products can provide our customers with the performance improvement and size reduction benefits of microwave circuit integration in convenient "drop-in" 50 ohm amplifiers. Further, our new SMP foundry service will be ideal for lower-cost prototyping of SiC or GaN MMICs by allowing customers to purchase a portion of a shared multi-project wafer."
"This MMIC milestone is the culmination of many years of internal investment and external support from the U.S. Department of Defense, the Title III Office, and the Defense Advanced Research Projects Agency (DARPA). We are extremely pleased to see the results of these efforts beginning to pay off for both the military and commercial markets," said Dr. John Palmour, executive vice president for advanced devices at Cree.
Features of the GaN RF MMICs include:
CMPA0060005 GaN MMIC
* Wideband distributed amplifier covering DC - 6 GHz
* Up to 5 watts of CW RF output power
* High wideband DC to RF efficiency (typically 25%)
* 28 to 48 volt operating voltage range
CMPA2560025 GaN MMIC
* Broad band reactively matched amplifier covering 2.5 - 6 GHz
* Up to 25 watts CW RF output power
* Outstanding broadband DC to RF efficiency (typically 30-45%)
* 28 volt operating voltage
Both of these new GaN MMIC products will be demonstrated at the Cree booth, #1243, at the 2008 IEEE/MTT-S International Microwave Symposium in Atlanta, GA, June 15-20, 2008. For additional information regarding Cree's new SMP foundry service or other Cree products and services, please call (919) 287-7816 or visit the Cree website at www.cree.com
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