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II-VI, Inc. and Sensor Electronic Technology, Inc. Enter Into Distribution Agreement
Source/Type: Company News Releases

January 27, 2004... II-VI Incorporated (II-VI, Saxonburg, PA) and Sensor Electronic Technology, Inc. (SET, Columbia, SC) have signed a joint marketing and sales agreement for III-Nitride based epitaxial wafers produced by SET on Silicon Carbide substrates manufactured by II-VI. The two companies will jointly market their products in the United States, Japan, and Germany using II-VI’s marketing and distribution infrastructure. The initial product portfolio includes quaternary AlInGaN-based 2” and 3” diameter epitaxial wafers on 6H-SiC substrates and also 2”, 3” and 4” diameter epitaxial wafers on sapphire substrates.

“This distributorship agreement with a large materials manufacturer such as II-VI gives our company an opportunity to reach out to overseas markets through a well-established marketing and sales infrastructure in a very cost efficient way”, says Dr. Remis Gaska, President and CEO of SET. “It is an integral part of our strategy to become a leading source of III-Nitride based epitaxial wafer technology on silicon carbide substrates.”

The two companies have successfully combined semi-insulating 6H-silicon carbide (SiC) substrate production capabilities at II-VI with epitaxial material growth technology developed at SET. The SET/II-VI team is sampling 2" and 3” diameter AlInGaN/GaN HFET wafers for fabrication of ultra-high power transistors, which are key building blocks for microwave power amplifiers (MPAs). MPAs amplify radio-frequency signals and are central pieces in transmit/receive modules of both military and commercial radars and communications systems, including networks of base stations for wireless communications (cell phones and internet).

The development of this technology has been strongly supported by the U.S. Government. II-VI has received significant funding from Title III, AFRL and Navy/ONR, focused on process improvement and manufacturing scale-up. In 2003 alone, SET received seven Small Business Innovation Research (SBIR) awards from MDA and DARPA to develop and commercialize III-Nitride based materials and device technology.

About the II-VI Incorporated, Wide Bandgap Materials Group

The Wide Bandgap Materials Group of II-VI Incorporated has the strategic goal to become a leading volume supplier of affordable, high performance wide bandgap semiconductor materials. This group currently manufactures and markets single crystal silicon carbide substrates for use in the solid-state lighting, wireless infrastructure, RF electronics and power switching industries. The Wide Bandgap Materials Group has two facilities located in Pine Brook, NJ and Saxonburg, PA, respectively www.ii-vi.com.

About Sensor Electronic Technology

Sensor Electronic Technology, Inc. is a start-up business with the strategic goal to commercialize proprietary III-Nitride (GaN, AlN, InN and their alloys) semiconductor technology and become a major supplier of materials and devices for emerging high-power RF electronics, ultraviolet radiation technology and solid-state lighting markets. Founded in New York State by two Rensselaer Polytechnic Institute professors, Remis Gaska and Michael Shur, SET, Inc. received first funding in year 2000. In August 2002, the company moved all of its operations to Columbia, SC www.s-et.com. Currently, SET is marketing epitaxial wafers, UV LEDs and offers services on gas delivery systems design, assembling and installation.

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