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Epistar Qualifies Veeco EPIK700 MOCVD System for High-volume LED Production
LIGHTimes News Staff

September 30, 2014...Veeco Instruments Inc. based in Plainview, New York USA, reported that Epistar Corporation has successfully evaluated and accepted the new TurboDisc® EPIK700™ Gallium Nitride (GaN) Metal Organic Chemical Vapor Deposition (MOCVD) system for LED production.

“As the leader in LED technology and commercialization, it is vital that we continue to push our roadmap to reduce solid state lighting costs with the most innovative and efficient production solutions available,” said Dr. MJ Jou, president, Epistar Corporation. “EPIK’s performance, reliability and production readiness, as well as the support we received from Veeco during the beta testing phase, fully met our high manufacturing standards. The seamless recipe transfer from our installed base of Veeco K465i™ and MaxBright® systems to the EPIK700 is allowing us to quickly produce production-quality LED devices. In addition, the EPIK700’s cost of ownership advantage will help reduce our cost per wafer, making it a highly attractive platform for our future capacity expansions.”

Veeco claims that its newly launched EPIK700 MOCVD system, which is based on its TurboDisc technology, enables customers to achieve a cost per wafer savings of up to 20 percent compared to previous MOCVD systems through increased productivity, reduced operating expenses, and improved wafer uniformity.

Ammono Creates More Economical p-type Bulk GaN
LIGHTimes News Staff

August 27, 2014...Ammono S.A., a producer of bulk gallium nitride (GaN) using ammonothermal technology based in Warsaw, Poland, has added p-type bulk AMMONO-GaN substrates to its portfolio. The company points out that providing electronics majority charge carriers (n-type) though dedicated donor doping can increase GaN conductivity. However, Ammono says that successful and efficient p-type doping of GaN was always difficult technologically because typically acceptors required high activation energy. Previously, epitaxial methods or ion implementation could only obtain thin layers of p-type GaN. The ammonothermal process incorporates the acceptor during the growth, resulting in a greater hole concentration and p-type conductivity, without creating structural defects.

The dislocation density in p-type AMMONO-GaN remains the same as that of n-type AMMONO-GaN substrates, being below 5×104 cm-2. Carrier (free hole) concentration in this material is at the level of 1016 cm-3 while electrical resistivity is 10-100 Ω*cm. According to Ammono, these new p-type GaN substrates should enable the construction of novel devices. The introduction of such a new substrate offers new potential for device architectures. The company expects that LEDs, laser diodes, high-frequency transistors, and high power transistors and high-frequency transistors may gain many performance benefits using the new material.

Dr. Marcin Zajac will present details about the new material during the International Workshop on Nitride Semiconductors (IWN2014) in Wroclaw, Poland on August 25th (Growth 1 session at 15:45).

Rubicon Technology to Showcase Large-Diameter Patterned Sapphire Substrates (PSS) at LED Korea 2014
LIGHTimes News Staff

February 13, 2014...Rubicon Technology, Inc. of Bensenville, Illinois USA, a provider of sapphire substrates and products to the LED market, announced that it will showcase large-diameter patterned sapphire substrates (PSS) as well as its line of 6”polished sapphire wafers for the LED industry at LED Korea 2014 at COEX, Seoul, Korea, February 12-14, 2014. Rubicon will exhibit its line of sapphire products in Booth #4707.

The company notes that most high-brightness LED manufacturers etch a pattern into the sapphire wafers in order to both improve epitaxial growth and extract more light from each chip. Rubicon says that its patterned sapphire substrates have been available for purchase in smaller diameters from other companies, but claims that it is the first company to offer 6” and 8” patterned sapphire substrates. Rubicon points out that it offers 4", 6", and 8" patterned sapphire substrates for LED chip manufacturers.

“Rubicon Technology continues to pioneer innovations in sapphire substrates,” said Raja M. Parvez, president and CEO, Rubicon Technology. “As the world’s most experienced provider of 6-inch sapphire wafers, Rubicon is uniquely positioned to drive the evolution of substrates – patterning large diameter sapphire substrates. This advance helps LED manufacturers gain the efficiency of larger diameters, combined with the industry’s most precise patterning capability, all from a supplier known for quality and reliability at high volume.”

Rubicon offers fully customizable sub-micron patterning capability with dimensional tolerances, within ±0.1 µm. The company reportedly maximizes usable area with an edge exclusion zone as small as 1 mm. Patterning comes in a range of shapes including: cone, dome and pyramid, and in a variety of orientations.

Aixtron SE and Manz AG to Collaborate on OLED Manufacturing
LIGHTimes News Staff

January 8, 2014...Aixtron SE of Aachen, Germany, and Manz AG, a Reutlingen-based engineering company, have agreed to collaborate on developing further solutions for use in efficient organic light-emitting diode (OLEDs) production. The partners will be developing a new system based upon Aixtron's OVPD process technology to demonstrate efficient organic layer deposition up to a substrate size of Gen8 (2,300 mm x 2,500 mm). The new demonstration system is expected to enable the efficient production of OLEDs for displays and lighting applications on an industrial scale and at a reasonable prize for the first time.

Manz will be contributing its experience in purifying and handling large-scale glass substrates and in developing and manufacturing large vacuum systems. Together the companies hope to manufacture extremely homogenous, easily scalable thin films with high material efficiency and deposition rates. The new system will be assembled in the coming months in a clean room at Aixtron. As well as demonstrating the proprietary OVPD process and its scalability for large substrates, a key focus will be the qualification of new components.

OVPD technology has been exclusively licensed to Aixtron from Universal Display Corporation (UDC), Ewing, New Jersey USA, for equipment manufacture. OVPD technology is based on an invention by Professor Stephen R. Forrest et al. at Princeton University, USA, which was exclusively licensed to UDC. Subsequently, Aixtron and UDC jointly developed and qualified OVPD pre-production equipment.

San’an Opto's Xiamen Subsidiary Receives RMB 80 Million Subsidy
LIGHTimes News Staff

December 18, 2013...San’an Opto, an LED maker based in mainland China, reported that the company will purchase 20 single chamber or five four-chambered GaN MOCVD systems from global companies for its Xiamen subsidiary on Dec. 16, 2013. Xiamen San’an Opto received RMB 24 million (US$ 3.95 million) subsidies for four four-chambered MOCVD systems. This accounts for about 30 percent of total subsidies as of Dec. 13, 2013. This latest subsidy is part of an ongoing effort by the Xiamen government and People’s Government of Siming for subsidizing companies importing MOCVD equipment in the Xiamen Torch Hi-tech Industrial Development Zone to encourage optoelectronic industry development.. So far, San’an Opto has received 70 percent subsidiy for four multi-reactor MOCVDs. The manufacturing equipment subsidies received from People’s Government of Siming are considered as deferred income and are recorded in terms of the company's profit and loss over the equipment life span. 

Aixtron Celebrates 30th Anniversary
LIGHTimes News Staff

December 5, 2013...Aixtron, the maker of deposition systems that started as a spin-off at RWTH Aachen University in Germany celebrated its 30th Anniversary. Since the company supplied its first research system to AEG in Ulm in 1984, Aixtron has sold around 3,000 deposition systems worldwide. The company benefited from demand for ever smaller, faster and more cost-effective components.

“Optoelectronics is the way ahead” – that is how Dr. Holger Jürgensen, physicist and now Honorary Chairman of Aixtron’s Supervisory Board described his vision. He put this into practice by founding Aixtron together with Dr. Meino Heyen and Heinrich Schumann in December 1983. “One major event was the delivery of the first commercial Planetary Reactor® system in 1990 – a milestone in the development of reliable, scalable deposition systems for semiconductors," commented Dr. Jürgensen looking back.

Aixtron points out that the idea of developing gas-phase deposition materials coating technologies for use in semiconductor chip manufacturing has made a great difference. The company's production technologies have promoted the global LED industry and have also augmented fields of data communication, entertainment electronics and cellphone technology.

“None of this would have been possible without greatly committed employees, colleagues and outstanding partners in research and industry, with whom Aixtron has established longstanding close relationships," commented Aixtron CEO Martin Goetzeler. “Innovative materials technologies will always be the key to new applications. Our equipment helps our customers to secure leading positions in rapidly growing markets. We are therefore investing extensively in research and development to create promising new processes and materials. Relevant examples include silicon applications, high-performance electronics and OLED technology, in which organic materials emit light.”

Today Aixtron employs about 800, of which 250 scientists and engineers work on tomorrow’s technology trends.

Plessy Releases New Generation of GaN-on-Silicon LEDs
LIGHTimes News Staff

December 3, 2013...Plessey based in Plymouth, England, announced the availability of its next generation GaN-on-Silicon mid-power LEDs. The company says that the new product family doubles the efficacy of Plessey's first generation MAGIC™ (Manufactured on GaN-on-Si I/C) products released in February 2013. Plessey claims to be able to achieve high flux output LED products at substantially lower cost using standard silicon semiconductor production techniques,. The PLW114050 is the first in a family of entry-level LED lighting products that will be released.

The PLW114050 LEDs are available in a CCT range from 6500K to 2700K, with a Lambertian distribution in an industry standard 3020 package. Operating with a drive current of 60mA, the PLW114050 has a typical forward voltage of 3.2V. At a nominal 10 lumens running at 60 mA and 3.2 V, the LED has an efficacy of 52 lm/W. Plessey also supplies the blue LED PLB010050 in sawn-wafer die form. Additional package options will be made available. A full datasheet is available on the Plessey website.

Dr. Keith Strickland, Plessey's CTO said, "We have a roadmap that puts MAGIC™ ahead of the efficacies achieved by sapphire-based LEDs and, thereby, sets a new milestone in terms of Lm/$ performance. By approaching efficacy parity, we are accelerating the widespread adoption of GaN-on-Si LED-based lighting products. Our MAGIC™ LED products have a cost advantage over comparable sapphire-based LEDs as we use 6-inch, high yield, standard, automated silicon manufacturing technology."

Dr. Jose Lopez, Plessey's Chief Commercial Officer, said, "Our aim is to light the world with MAGIC™ LEDs."

European Patent Office Revokes Universal Display’s Organometallic Iridium Patent
LIGHTimes News Staff

November 22, 2013...Universal Display Corporation of Ewing, New Jersey USA, a developer of the PHOLED®, announced that the European Patent Office (EPO) revoked the patent previously allowed by the lower EPO, EP patent number 1449238 (the EP '238 patent). The patent revocation was a decision issued on the previously-disclosed appeal of a prior ruling relating to the company’s the EP '238 patent. According to Universal Display, the lower EPO had previously upheld the broadest claim of coverage for organometallic iridium device architectures. The opposing parties in the patent litigation were Sumitomo Chemical Company, Merck Patent GmbH and BASF SE.

“While we believe the EPO’s decision is erroneous, as we have noted in the past, any one decision in any one jurisdiction is not expected to have a material effect on our commercial business or agreements,” said Steven V. Abramson, president and CEO of Universal Display Corporation.

Universal Display said that the company may seek to file a petition to review the matter, which if successful, may reopen the matter for review by the appellate panel. Additionally, the Universal Display says it has a pending divisional EP patent application in which it intends to pursue substantial patent coverage that is similar to that provided in related patents that have previously been issued in the other jurisdictions.

Universal Display attempted to downplay the patents significance saying in a press release, "The EP ‘238 patent is one of more than sixty patents issued worldwide that cover four early fundamental phosphorescent OLED inventions developed at Princeton University and the University of Southern California, which are exclusively licensed to Universal Display Corporation. " The company further noted that it has a growing portfolio of over 3,000 issued and pending OLED device, architecture and material patents worldwide.

Universal Display Corporation also pointed out, "…oppositions against issued and pending patents are common and decisions by patent tribunals are subject to further review and consideration. In addition, because of the application of different rules and regulations in different countries, and the fact that each patent in each jurisdiction represents a unique and distinct set of rights, a specific outcome in one jurisdiction may not be indicative of the likely outcome of similar challenges in other jurisdictions."

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