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Editorial: Spire Now Open to Licensing Key HBT Processing Patents
 
... Spire Corporation of Bedford, Massachusetts USA was one of the handful of companies that pioneered HBT processing on MOCVD back in the good old days when HBTs first came on the scene. Some of you new to the business might not even realize that Spire pioneered MOCVD reactor technology...
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Philips Reports Lumileds' Impressive Financial Performance for FY '04
Jo Ann McDonald, Founding Editor

December 23, 2004...One of the parent companies of Lumileds Lighting, Philips (the other being Agilent) has broken precedence and reported the financial performance of its offspring, and that performance was impressive. For the 2004 fiscal year that just ended for Philips, Lumileds reported sales of $280 million, representing a 43% annual growth, and their net income was $62 million, which as a percentage of sales, represents 22% of sales. The figures were released during a presentation to analysts by Peter van Strijp, Executive VP and CEO BU Solid State Lighting at Philips on the occasion of their annual Analysts Day. This was the first time Lumileds' revenues have been publicly reported and the San Jose, California based Lumileds is justly proud of their numbers, as is their parent company, Philips, which clearly made Solid State Lighting (SSL) the hot topic of this particular Analysts Day gathering in Europe. The presenters included the highest ranking executives of Philips and the entire proceedings are available online, a webcast replay of which will be available online via this location for a year. An entire section was devoted to Philips' strategic view of the SSL industry and Philips' role in it. Commentary on the entire presentation and on Lumileds' performance and role in the industry will be covered in detail in an upcoming McDonald Report. In the meantime, we recommended you hit the above hotlinks and view the Philips presentations for yourself. The pictures alone tell an incredible success story for SSL applications.

Fujitsu Announces Results of GaN on Aluminum Nitride HEMT Development

December 23, 2004...Fujitsu Laboratories Ltd. reported their GaN on AlN results at IEDM last week and the details will be of considerable interest to those working on GaN-based electronic device designs as well as the GaN-related alternative substrate development community, which includes sapphire, SiC, native GaN, and "other" of which AlN appears to be gaining recognition as well as silicon. We'll be reporting more on Fujitsu's progress as well as Nitronex' devices which recently ran successfully through the TriQuint process which were revealed at our recent Outlook conference. Until then, we point you to the Fujitsu company news release.

 

Jacques Pankove Officially Retires and Signs Astralux Over to Rande Treece
Jo Ann McDonald, Founding Editor

December 20, 2004...GaN LED and HBT pioneer, Jacques Pankove, who has often been honored by our industry, has recently officially retired from Astralux, the company from which he has so wonderfully served the wide bandgap community since his retirement from serving as a Professor at the University of Colorado in the USA. Indeed a world citizen and longtime good friend to this editor, Jacques and his wife Ethyl, who has been his partner in Astralux, continue to enjoy good health and are watching the company they formed now be run by Randolph E. Treece, Ph.D (Rande) whom Jacques has mentored in recent years to take over the company. The right time has evidently come, and as of October, Rande became owner of Astralux. What Astralux does is what it has always done, leverage its core expertise in research and development and help young companies grow and successfully spin out from Astralux, as they did with their first company, PowerSicel, Inc., back in December of 2001. What PowerSicel did was leverage Jacques and Rande's expertise in SiC transistor technology and a commitment of funds with that of an Astralux employee, Dr. John Torvik, who serves as PowerSicel's co-founder and President/CEO). For this, Astralux received an equity stake in PowerSicel and commenced to raise additional funds to commercialize the transistor technology. PowerSicel and Astralux continue to work closely together.

That model will be repeated often at Astralux in the years ahead and more people like John Torvik are precisely what Rande's looking for. Astralux is essentially a cutting edge hothouse. They bring technology from the concept stage to the point that a high-growth company can be essentially birthed (spun off) from Astralux. "We will grow value in Astralux by repeating this process. We are currently working on the early stages of three main technology families. The first is hybrid substrates, the combination of thin slices of one material bonded to another to achieve the benefits of both. We have been funded by ONR and the Air Force to develop SiC related hybrid substrates," said Rande Treece. The second area of research involves the exciting devices that can be developed based vacuum electron emission from negative electron affinity (NEA) surfaces. "Through the appropriate engineering it should be possible to create an electronic cooler, or a direct-thermal-to-electrical converter, or (hopefully) both using GaN-based NEA materials. We are currently funded by DARPA to work on this and have also received funds from the Office of the Secretary of Defense related to these activities," he explained. "The third area is based on UV-based bio-defense systems based on electron-pumped UV emission. We are working with California-based Photon Systems, Inc. to develop a UV laser that will be included in an analysis tool to detect biological agents. This work is supported by DARPA. We are also working on a bio-decontamination tool with the Air Force." Astralux currently has 7 issued patents and 5 in the hopper, which we covered in detail in our latest issue of LIGHTinsight. Rande can be reached via www.Astraluxinc.com his tel is: +1 303-413-1440 and email is rtreece@astraluxinc.com.

Endwave Transceivers Headed for Nokia FlexiHopper Microwave Radios

December 23, 2004...Endwave of Sunnyvale, California USA has signed a new contract amendment with the Networks division of Nokia, valued at several million dollars, which expands the range of frequencies currently supplied by Endwave. The transceivers will be installed in both the Nokia FlexiHopper and next generation Nokia FlexiHopper Plus microwave radios for use in Nokia's cellular networks in Europe, Asia and Latin America over the next two years. Endwave's transceivers are customized to seamlessly integrate with Nokia's FlexiHopper radios by combining the high frequency transmit and receive functions of a radio system into one package, which can be used for many communication needs in cellular, fixed and dedicated networks. "This follow-on agreement expands upon the range of frequencies Endwave provides to Nokia and further strengthens our position as a key supplier of next-generation cellular broadband wireless subsystems," said Ed Keible, President and CEO of Endwave Corporation. Company news release

Opto Tech Tagged to Build Gigantic LED Display for 2008 Olympics in Beijing

December 23, 2004...Opto Tech of Taiwan has received the honor of building what looks to be the largest LED display built to date, measuring approximately 6,000 square meters -- 200 meters in length and 30 meters in width -- for promoting the Bejing Olympics and serve as a major focal point at the International Trade Center. According to a Dec. 21 DigiTimes report, Opto Tech intends to invest $20 million to complete the Bejing project, and that other major cities in China are likely to commission similar giant screen displays. According to the report, Opto Tech also told DigiTimes that they've begun volume shipments of Nichia-branded blue spectrum LEDs.

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Commentary & Perspective...

Spire Now Open to Licensing Key HBT Processing Patents

December 20, 2004...Spire Corporation of Bedford, Massachusetts USA was one of the handful of companies that pioneered HBT processing on MOCVD back in the good old days when HBTs first came on the scene. Some of you new to the business might not even realize that Spire pioneered MOCVD reactor technology and still works wonders on their proprietary platforms producing extraordinary compound semi based products for the solar photovoltaic and biomedical industries. And now that the Bandwidth foundry is again under the Spire wing, this pioneering compound semi company is reentering the mainstream of MOCVD activity. To celebrate that reentry, Spire is letting it be known to the compound semi community that their two key HBT process related patents are available for license. Mind you, there are undoubtedly a number of companies already using the Spire process, so checking ones current process carefully and comparing it with these patents might be a very good idea.

The two Spire USA patents on HBT processing are: No. 5,116,455, entitled 'Process of Making Strain-Free Carbon-Doped Epitaxial Layers and Products so Made' and No. 5,231,298 entitled 'GaAs Device having a Strain-Free C-Doped Layer'. Both were developed by Spire's founder, President and CEO, Roger Little, and Ed Gagnon, General Manager of Spire's Bandwidth Semiconductor. Ed can be reached at egagnon@bandwidthsemi.com or his direct tel in New Hampshire USA is +1 603 689-1226. Bandwidth is one of those true pure play foundries that specializes in highly customized work, mainly on designs for high end defense systems. Bandwidth is doing an excellent business these days. In talking with Ed, he explained that the two Spire patents are an ancillary asset of their parent company, but since Ed was in on the original development of them in the early 1990s, he's an excellent source of detailed information. To follow is what he sent us as a description of the two patents now up for licensing by all those companies worldwide which are likely using the process anyway.

U.S. Patent No. 5,116,455 was issued to Spire in May of 1992 and describes a process for making devices without lattice strain with doped p-type epitaxial layers. A carbon-doped p-type layer forms the base of a GaAs HBT device. Co-doping this layer is used to balance the strain induced via the carbon doping. Co-doping also serves to enhance device performance and alloy hardening. Defects are reduced, improvement are seen in carrier lifetime and ohmic contact formation is more efficient. Useful in particular in the growth of HBT and related device structures. This process can also be used for laser and related optoelectronic device fabrication.

U.S. Patent No. 5,231,298 was issued to Spire in July of 1993 and describes a device having a carbon-doped p-type base layer which is co-doped to relieve strain between the layers. This device exhibits improved performance and lower defect formation, better mobility and longer carrier lifetime. This device is a basis for high performance semiconductor applications which use gallium arsenide, such as an HBT or similar structure. This device type can also be used for optoelectronic device applications.

So check your process carefully, and if you're using 455 and/or 298, contact Spire (before they contact you). It's so much easier that way. You'll find Spire very easy to work with and willing to share their long-standing knowledge of MOCVD processing with their licensees. Ed and Roger also wanted it known that Spire is willing to negotiate the licenses on commercially reasonable terms.

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