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news on the broad LED industry, outside of general lighting, along with the
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luminaires and application stories.
GaN-on-Silicon LEDs Forecast to Increase to 40 Percent of Market Share by 2020, According to IHS
LIGHTimes News Staff
December 10, 2013...IHS Inc predicts that the penetration of gallium nitride-on-silicon
(GaN-on-Si) wafers into the LED market will increase at
a compound annual growth rate (CAGR) of 69 percent from 2013 to 2020. IHS
forecasts that by 2020, GaN-on-Silicon LEDs will account for 40 percent of all
GaN LEDs manufactured.
In 2013, 95 percent of GaN LEDs will be manufactured on sapphire wafers.
However, only 1 percent will be manufactured on silicon wafers. This will soon
change according to IHS. The growth in the manufacturing of GaN-on-Si LEDs
between 2013 and 2020 will take market share from both sapphire and silicon
carbide wafers, according to IHS predictions. The accompanying figure shows the
GaN-on-Si LED market share outlook in terms of revenue for the packaged LED
“Manufacturing large ingots made from sapphire is difficult,
whereas silicon wafers are available from 8 inches up to 12 inches and are
generally cheaper and more abundant,” said Dkins Cho, senior analyst
for lighting and LEDs at IHS. “There is a large pre-existing industry
for silicon-based manufacturing that is leveraged to create economies of scale
and reduce the cost of an LED.”
IHS says that the shift to producing GaN-on-silicon LEDs is generally
accepted to require minimal with manufacturers only having to repurpose their
facilities. IHS notes that companies that previously manufactured CMOS
semiconductors already own legacy 8-inch CMOS fabrication units that can be
converted for LED production with a small modification. Furthermore, IHS says
that these companies already have in-house expertise and technology associated
with silicon-based processes.
“Many of the CMOS semiconductor manufacturers already have
excellent inspection tools, unlike traditional LED companies,” Cho
said. “This could help increase their process yield through in-situ
monitoring. However, it is unlikely the repurposing will happen overnight;
instead we forecast a shift during the coming years.”
Aixtron Celebrates 30th Anniversary
LIGHTimes News Staff
December 5, 2013...Aixtron, the maker of deposition systems that started as a spin-off at RWTH
Aachen University in Germany celebrated its 30th Anniversary. Since the company
supplied its first research system to AEG in Ulm in 1984, Aixtron has sold
around 3,000 deposition systems worldwide. The company benefited from demand
for ever smaller, faster and more cost-effective components.
“Optoelectronics is the way ahead” – that is how
Dr. Holger Jürgensen, physicist and now Honorary Chairman of Aixtron’s
Supervisory Board described his vision. He put this into practice by founding
Aixtron together with Dr. Meino Heyen and Heinrich Schumann in December 1983.
“One major event was the delivery of the first commercial Planetary
Reactor® system in 1990 – a milestone in the development of reliable,
scalable deposition systems for semiconductors," commented Dr. Jürgensen
Aixtron points out that the idea of developing gas-phase deposition
materials coating technologies for use in semiconductor chip manufacturing has
made a great difference. The company's production technologies have promoted
the global LED industry and have also augmented fields of data communication,
entertainment electronics and cellphone technology.
“None of this would have been possible without greatly committed
employees, colleagues and outstanding partners in research and industry, with
whom Aixtron has established longstanding close relationships," commented
Aixtron CEO Martin Goetzeler. “Innovative materials technologies will
always be the key to new applications. Our equipment helps our customers to
secure leading positions in rapidly growing markets. We are therefore investing
extensively in research and development to create promising new processes and
materials. Relevant examples include silicon applications, high-performance
electronics and OLED technology, in which organic materials emit
Today Aixtron employs about 800, of which 250 scientists and engineers work
on tomorrow’s technology trends.
Plessy Releases New Generation of GaN-on-Silicon LEDs
LIGHTimes News Staff
December 3, 2013...Plessey based in Plymouth, England, announced the availability of its next
generation GaN-on-Silicon mid-power LEDs. The company says that the new product
family doubles the efficacy of Plessey's first generation MAGIC™
(Manufactured on GaN-on-Si I/C) products released in February 2013. Plessey
claims to be able to achieve high flux output LED products at substantially
lower cost using standard silicon semiconductor production techniques,. The
PLW114050 is the first in a family of entry-level LED lighting products that
will be released.
The PLW114050 LEDs are available in a CCT range from 6500K to 2700K, with a
Lambertian distribution in an industry standard 3020 package. Operating with a
drive current of 60mA, the PLW114050 has a typical forward voltage of 3.2V. At
a nominal 10 lumens running at 60 mA and 3.2 V, the LED has an efficacy of 52
lm/W. Plessey also supplies the blue LED PLB010050 in sawn-wafer die form.
Additional package options will be made available. A full datasheet
is available on the Plessey website.
Dr. Keith Strickland, Plessey's CTO said, "We have a roadmap that puts
MAGIC™ ahead of the efficacies achieved by sapphire-based LEDs and,
thereby, sets a new milestone in terms of Lm/$ performance. By approaching
efficacy parity, we are accelerating the widespread adoption of GaN-on-Si
LED-based lighting products. Our MAGIC™ LED products have a cost
advantage over comparable sapphire-based LEDs as we use 6-inch, high yield,
standard, automated silicon manufacturing technology."
Dr. Jose Lopez, Plessey's Chief Commercial Officer, said, "Our aim is to
light the world with MAGIC™ LEDs."
European Patent Office Revokes Universal Display’s Organometallic Iridium Patent
LIGHTimes News Staff
November 22, 2013...Universal Display Corporation of Ewing, New Jersey USA, a developer of the
PHOLED®, announced that the European Patent Office (EPO) revoked the patent
previously allowed by the lower EPO, EP patent number 1449238
(the EP '238 patent). The patent revocation was a decision issued on the
previously-disclosed appeal of a prior ruling relating to the company’s
the EP '238 patent. According to Universal Display, the lower EPO had
previously upheld the broadest claim of coverage for organometallic iridium
device architectures. The opposing parties in the patent litigation were
Sumitomo Chemical Company, Merck Patent GmbH and BASF SE.
“While we believe the EPO’s decision is erroneous, as we
have noted in the past, any one decision in any one jurisdiction is not
expected to have a material effect on our commercial business or
agreements,” said Steven V. Abramson, president and CEO of Universal
Universal Display said that the company may seek to file a petition to
review the matter, which if successful, may reopen the matter for review by the
appellate panel. Additionally, the Universal Display says it has a pending
divisional EP patent application in which it intends to pursue substantial
patent coverage that is similar to that provided in related patents that have
previously been issued in the other jurisdictions.
Universal Display attempted to downplay the patents significance saying in a
press release, "The EP ‘238 patent is one of more than sixty patents
issued worldwide that cover four early fundamental phosphorescent OLED
inventions developed at Princeton University and the University of Southern
California, which are exclusively licensed to Universal Display Corporation.
" The company further noted that it has a growing portfolio of over 3,000
issued and pending OLED device, architecture and material patents worldwide.
Universal Display Corporation also pointed out, "…oppositions
against issued and pending patents are common and decisions by patent tribunals
are subject to further review and consideration. In addition, because of the
application of different rules and regulations in different countries, and the
fact that each patent in each jurisdiction represents a unique and distinct set
of rights, a specific outcome in one jurisdiction may not be indicative of the
likely outcome of similar challenges in other jurisdictions."
New Picosun Fast P-200 Batch ALD Tool Designed for Fabrication of LEDs and MEMs
LIGHTimes News Staff
November 21, 2013...Picosun Oy of Finland, an (ALD) equipment manufacturer, announced the launch
of the new Picosun P-200 batch ALD system. The P-200 ALD tool is specifically
optimized for fast and efficient manufacturing of MEMS (MicroElectroMechanical
Systems, e.g. sensors and actuators), LEDs, and power electronics components.
The P-200 ALD tool is designed for wafer size 150 mm or 200 mm in batch of 25
wafers. The company says that the system allows a variety of automation options
available for the P-200 tool. The system can be equipped with a linear inline
loader, it can be operated with an industrial robot, connected to a vacuum
robot, or integrated with a vacuum load lock, glove box, or mini clean
environment. The company boasts that the system's quick, fully automated batch
processing enables high production throughput with proven process quality and
what the company describes as low cost-of-ownership. According to the company,
the P-200 ALD system has has been selected by two prominent LED manufacturers
and has been accepted by two production customers for MEMS.
"We are extremely happy to secure our position in the rapidly expanding
LED, MEMS, andcompound semiconductor market with our new
PICOSUN™ P-200 production tool. The compact,small footprint
design of the tool, combined with extremely fast batch processing and
excellentfilm quality give us an unrivaled competitive edge,"
stated Juhana Kostamo, managing director of Picosun.
GT Advanced Technologies to Supply Sapphire Materials to Apple, But not for LEDs
LIGHTimes News Staff
November 6, 2013...GT Advanced Technologies announced that it has entered into a multi-year
supply agreement with Apple Inc. to provide sapphire material. The sapphire
material will specifically not go into LEDs. It will go into screens and lenses
of Apple products. GT will own and operate ASF® furnaces and related equipment
to produce the material at an Apple facility in Arizona in which GT expects to
employ over 700 people. Apple will provide GT with a prepayment of
approximately $578 million. GT will reimburse Apple for the prepayment over
five years, starting in 2015. Although the agreement does not guarantee
purchase volumes, it does require GT to maintain a minimum production capacity.
GT will be subject to certain exclusivity terms during the agreement. GT
expects this agreement to add to revenues starting in 2014.
GT has accelerated the development of its next generation, large capacity
ASF furnaces to deliver low cost, high volume manufacturing of sapphire
material for its non-LED initiative with Apple. Despite this new agreement
being specifically not for LEDs, it is expected to enable the expansion of GT's
LED, industrial and specialty sapphire businesses by positioning GT and its
equipment customers as the industry's lowest cost sapphire producers.
Tom Gutierrez, GT's president and CEO commented, "By leveraging the new
materials operation and our enhanced R&D efforts, we will be well
positioned to drive the growth of other sapphire opportunities, including the
expansion of our LED and industrial sapphire businesses in partnership with our
Rubicon Technology Launches Commercial Line of 4-, 6-, and 8-Inch Patterned Sapphire Substrates
LIGHTimes News Staff
October 31, 2013...Rubicon Technology, Inc., a provider of sapphire substrates based in
Bensenville, Illinois, announced the launch of the first commercial line of
large diameter patterned sapphire substrates (PSS) in four-inch through
eight-inch diameters. This new product line provides LED chip manufacturers
with a ready-made source of large diameter patterned sapphire substrates for
the rapidly growing LED general lighting industry.
Rubicon says that most high-brightness LED manufacturers etch a pattern into
the sapphire wafers in order to both improve epitaxial growth and extract more
light from each chip. Patterned sapphire substrates have been available for
purchase in smaller diameters, but Rubicon is the first to offer highly
customizable 6” and 8” versions. According to Rubicon, the larger
substrates can help increase LED chipmakers’ throughput and
“As LED-based general lighting gains worldwide adoption,
large-diameter patterned sapphire substrates will become necessary to meet the
demands of the rapidly growing lighting market,” said Raja M.
Parvez, president and CEO of Rubicon Technology. “Rubicon has
developed an unmatched technology platform that is vertically integrated from
raw material through crystal growth, large diameter polished wafers, and now
custom PSS in 4”, 6” and 8” diameters. Our vertical
integration enables Rubicon to produce progressively larger sapphire products
while providing customers with exceptional quality, cost control, reliability,
Rubicon reportedly offers fully customizable sub-micron patterning
capability with tight dimensional tolerances, within ±0.1 µm. According to
Rubicon, its sapphire substrates can have an edge exclusion zone as small as 1
mm, maximizing the number of chips per wafer. Patterning is available in a
range of shapes including cone, dome and pyramid, and in a range of
orientations. Further customization of geometry, pattern and orientation is
available upon request.
Epistar Corp. Qualifies LayTec’s Pyro 400 for GaN LED Production
LIGHTimes News Staff
October 24, 2013...LayTec announced that Epistar Corp. has qualified LayTec´s in-situ metrology
system Pyro 400 for its GaN LED production. The LED manufacturer based in
Taiwan will now use LayTec's GaN surface temperature sensing with Pyro 400.
According to LayTec, the Pyro 400 metrology system controls the real GaN
surface temperature during epitaxial growth on infrared transparent substrates
like sapphire or SiC. The tool reportedly applies ultraviolet pyrometry to
provide information on the final emission wavelength of the LED already during
The head of the Epitaxy Engineering Division at Epistar commented, "We
are satisfied with GaN surface temperature measurement provided by Pyro 400.
The tool helps us further improve MOCVD controllability and LED production
Mr. Tom Thieme, director marketing & sales at LayTec, commented,
“We thank the team at Epistar for working together with
LayTec’s application engineers so closely. Through collaboration with
this important and innovative customer, we have established our UV pyrometry
tool in Epistar’s daily LED production application. We successfully
demonstrated that precise wafer surface temperature control gives room for even
further LED yield improvement and cost reduction.”
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